A New a-Si:H TFT Pixel Circuit Suppressing OLED Current Error Caused by the Hysteresis and Threshold Voltage Shift for Active Matrix Organic Light Emitting Diode

摘要

A new a-Si:H TFT pixel circuit for active matrix organic light emitting diode (AMOLED) is proposed and verified by device measurements and SPICE simulations. The experimental and simulation results show that the proposed pixel, which consists of 6-TFT and 1-capacitor and 2-additional horizontal signal lines, reduces a threshold voltage shift rate of a-Si:H TFT by reverse bias annealing, as well as compensates both a threshold voltage shift and hysteresis phenomenon of a-Si:H TFT by V{sub}T memory scheme.