Electron Emission Characteristics of The Porous Polycrystalline Silicon Diode

摘要

It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS-type Si operates as an efficient stable surface emitting cold cathode. 2.0 um of an nondoped polysilicon layer is formed on anheavily doped n-type silicon wafer and anodized in a solution of HF(50%) : ethanol = 1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.