Forming Low-Resistivity Electrodes of TFT LCD with Selective Electroless Plating Process

摘要

The silver gate electrodes for an a-Si TFT LCD are fabricated by the selective electroless plating (SELP) process. Thickness of silver film is about 150nm. Adhesion passes the 3M tape test and uniformity is less than 10% on G2 substrate. The transfer characteristics with the Silver gate electrodes respectively possessed good field effect mobility similar to conventionally fabricated a-Si TFTs. The a-Si TFTs with silver gate has I_(on)/I_(off) current ratio more than 1 × 10~6. Finally 4.1" QVGA TFT LCD with silver gate is lighted up to prove that the SELP process could provide an easy, low cost, non-vacuum and feasible method to fabricate TFT LCD.