Investigation of Electrical Pulse Erasing Method Effect on Current-Voltage Characteristics of Organic Bistable Device

摘要

The electrical characteristics of the organic bistable devices with AI/Alq_3-type Si structure with an electrical pulse erasing method are investigated. The bistable characteristic similar to that of metal/organic semiconductor/metal structure is demonstrated as well. Furthermore, generation of extra defects at both interfaces introduces variations on the electrical behaviors when erasing voltage conditions are applied on the organic bistable device. This device shows extremely easy fabrication processes and great potential in future advanced organic display.