TCAD Analysis for VLSI-Application-Oriented Process Optimization

摘要

A new process optimization procedure is hereby presented, based on the quantitative impact of the variations of process variables on VLSI design performance. Process tuning is obtained through reverse modeling on transistor characteristics, process variations are then addressed by means of consistent TCAD simulations. Optimum process variables for minimum dynamic and static dissipation have been investigated in a low-power prototype chip, integrated in a 0.25 μm technology.