WAFER BONDING OF Si WITH DISSIMILAR MATERIALS

摘要

Wafer bonding provides a high degree of flexibility in material integration. However, the major concerns of Si wafer bonding with dissimilar materials are their thermal mismatch and the bubble generation during the annealing process. The former requires the annealing temperature as low as possible to achieve a sufficiently high bond energy. The latter depends on the removal of hydrocarbon contaminants from the mating surfaces prior to bonding.