A STUDY OF THE INTERFACE PHENOMENA OF TiW/Si AND TiN/Ti/Si

摘要

In the device fabrication processing TiW or Ti/TiN is generally used as a barrier metal and many studies have been performed. However, many questions are still remained with respect to the interaction at interface between Ti or TiW and Si. Here, we report that the interesting phenomena at the interface between the barrier metal and Si substrate are found, depending on the deposition temperature and type of the barrier metal, after heat treatment at the temperature of 450 ℃ followed by the Al deposition. However, the phenomena are not observed below the heat treatment of 400 ℃. To investigate the diffusion-barrier characteristic and interface reaction between barrier metal and Si, SEM micrographs, XRD and electron spectroscopy for chemical analysis (ESCA) depth profiles are analyzed.