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INVESTIGATION OF Ti. Co AND Fe SILICIDES ON SIMOX MATERIALS

机译:钛的调查。 SIMOX材料上的Co和Fe硅化物

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摘要

The fabrication of Ti, Co and Fe silicides on SIMOX materials have been investigated These multilayer structures have been synthesized by different method respectively. The physical properties and microstructure have been investigated. The experimental results show that TiSi_2 with a low sheet resistance of 4.5Ω/G, can be formed on the thin film SIMOX. An epitaxial CoSi_2 film has been obtained on SIMOX by a solid phase reaction of Co/Ti with Si overlayer of SIMOX. Semiconducting β-FeSi_2 film has been synthesized on SIMOX by solid phase epitaxy.
机译:研究了在SIMOX材料上制备Ti,Co和Fe硅化物的方法。这些多层结构分别通过不同的方法合成。已经研究了物理性质和微观结构。实验结果表明,可以在薄膜SIMOX上形成低阻值为4.5Ω/ G的TiSi_2。通过Co / Ti与SIMOX的Si覆盖层的固相反应,在SIMOX上获得了外延CoSi_2薄膜。通过固相外延在SIMOX上合成了β-FeSi_2半导体薄膜。

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