Deep Submicron Technology and The Applications (Invited)

摘要

A variety of deep submicron technology has been developed in the project of "Deep Submicron structure and Mesoscopic physics". The 93nm linewidth pattern and 0.3um PHEMT was obtained by X-ray lithography with synchrotron radation source in BEPC NL. 0.1 μm resolution was reached by electron beam lithography, which was performed in a modified NEC S-530 scanning electron microscope system. The microdisk lasers were fabricated by E- Beam direct writing combined with selective chemical etching processing. In addition, successfully investigated ICP dry etching system with high density plasma and obtained 0.4 μm linewidth pettern. E-Beam doping is a new method to obtain 0.1 μm shallow junction depth. We successfully apply the above technology and other alternative approaches for manufacture of 0.2 μm Si MOSFET's, 0.3 μm PHEMT, vacuum microelectronic diode array, etc. Adopted PECVD and Ar~+ laser recryslalization technology combined with SiN_x barrier Si quantum micro crystals of nm size and photoluminescence were obtained.