An Analytical Delayed-Turn-Off Model for 6H-SiC Buried-Channel NMOS Devices Considering Incomplete Ionization

摘要

This paper reports an analytical delayed-turn-off model for 6H-SiC buiied-channel NMOS devices considering incomplete ionization. As verified by the PISCES results, the analytical model provides an accurate prediction of the IV characteristics of a 6H-SiC buried-channel NMOS device. According to the analytical model, the slope of delayed-turn-off region becomes smaller as the doping density of the buried channel increases.