THE DEPENDENCE OF RESIDUAL STRESS AND WARPS OF SI WAFERS ON THE PROCESS TECHNIQUE

摘要

The paper describes that the residual stress is one of main reasons for the Si warp in processing Si substrate. The experiment shows that slicing wafers have relative large mechanical stress, and the magnitude depends on the way of cutting. The residual stress cannot be eliminated by chemical thinning technique. In order to maintain Si wafers flat in making devices, one should pay attention to removing the stress in the whole Si wafer process, not just the last processing order.