VISIBLE COMPOUND OPTICAL CAVITY VSIS GaAlAs-GaAs LASERS

摘要

By using a new method of liquid phase epitaxy (LPE) , a new kind of visible COC VSIS GaAlAs-GaAs semiconductor lasers have been fabricated, CW threshold current is 60 mA in the visible range of 779 -784 nm. And fundamental transeverse and single longitudinal mode up to 18mW/face cw operation are observed.