Influence of leakage and gain-cavity alignment on the performance of Al(GaInP) visible vertical-cavity surface emitting lasers

摘要

The temperature dependence of the threshold current I_th in visible vertical-cavity surface emitting lasers(VCSELs) is investigated. To separate the intrinsic, material effects such as carrier leakage into the X-minima from the structurally induced gain-cavity alignment effects of the VCSEL structure, simple equivalent edge emitting lasers(EELs) are considered in conjunction with full VCSELs.