CIRCUIT HOT CARRIER RELIABILITY SIMULATION IN ADVANCED CMOS TECHNOLOGY PROCESS DEVELOPMENT

机译：先进CMOS技术工艺开发中的电路热载子可靠性仿真。

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DC Hot Carrier parameters, e.g. Idsat and Idlin, were found to be correlated to AC Ring Oscillator frequency degradation. The impact of crosstalk induced voltage overshoot to invertor hot carrier degradation was quantified by reliability simulation. A set of designable parameters were used to ensure deep submicron technology hot carrier reliability.

机译：直流热载波参数，例如发现Idsat和Idlin与AC环形振荡器的频率下降有关。串扰感应的电压过冲对逆变器热载流子退化的影响通过可靠性仿真进行了量化。使用一组可设计的参数来确保深亚微米技术热载流子的可靠性。

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来源
《International conference on solid-state and integrated-circuit technology; 19951024-28; Beijing(CN)》|1995年|P.110|共1页
会议地点 Beijing(CN)
作者
Peng Fang; Ping C. Li; John T. Yue;
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作者单位

Advanced Micro Devices, Sunnyvale, CA94088, USA;

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原文格式 PDF
正文语种 eng
中图分类半导体集成电路（固体电路）;
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1. Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes [J] . Besnard G., Garros X., Andrieu F., Solid-State Electronics . 2015,第nova期

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2. Reliability impact due to high current, lattice and hot carriers temperatures on β~((2×2)) matrix ESD power devices for advanced CMOS technologies [J] . Ph. Galy, J. Bourgeat, J. Jimenez, Microelectronics reliability . 2011,第9a11期

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3. Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies [J] . D. Goguenheim, A. Bravaix, S. Gomri, Microelectronics & Reliability . 2005,第3a4期

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4. CIRCUIT HOT CARRIER RELIABILITY SIMULATION IN ADVANCED CMOS TECHNOLOGY PROCESS DEVELOPMENT [C] . Peng Fang, Ping C. Li, John T. Yue International conference on solid-state and integrated circuit technology . 1995

机译：先进CMOS技术工艺开发中的电路热载子可靠性仿真。
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机译：CMOS集成电路的热载流子可靠性。
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CIRCUIT HOT CARRIER RELIABILITY SIMULATION IN ADVANCED CMOS TECHNOLOGY PROCESS DEVELOPMENT

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