Optical studies of MOVPE-grown GaN layers

机译：MOVPE生长的GaN层的光学研究

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Abstract: Photoluminescence and reflectance studies of MOVPE grown GaN samples were performed. From reflectance measurements optical constants were calculated by means of Kramers-Kronig analysis in the energy region 0 $DIV 6 eV.!10

机译：摘要：进行了MOVPE生长的GaN样品的光致发光和反射率研究。根据反射率测量，通过Kramers-Kronig分析在能量区域0 $ DIV 6 eV。！10中计算光学常数。

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《International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology》|1998年|p.178-181|共4页
会议地点 Zakopane(PL);Zakopane(PL);Zakopane(PL)
作者
Mariusz Ciorga; Wroclaw Univ. of Technology; Wroclaw; Poland; Krzysztof Jezierski; Wroclaw Univ. of Technology; Wroclaw; Poland; Leszek Bryja; Wroclaw Univ. of Technology; Wroclaw; Poland; Jan Misiewicz; Wroclaw Univ. of Technology; Wroclaw; Poland; Regin;
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正文语种 eng
中图分类晶体学;
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2. Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer [J] . Sanorpim S., Takuma E., Katayama R., Physica status solidi, B. Basic research . 2003,第2期

机译：具有立方GaN（111）外延中间层的GaAs（111）B上MOVPE生长的GaN层的表征
3. Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer [J] . Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa Solid-State Electronics . 2006,第9a10期

机译：利用薄AlN界面层研究MOVPE生长的AlGaN / AlN / GaN HEMT结构中迁移率的提高
4. Optical studies of MOVPE-grown GaN layers [C] . Mariusz Ciorga, Krzysztof Jezierski, Leszek Bryja, International conference on solid state crystals . 1999

机译：Movpe-生长的GaN层的光学研究
5. A first-principles study of structural, electronic and optical properties of GaN, ZnO and (GaN)1--x(ZnO) x. [D] . Liu, Jian. 2015

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Optical studies of MOVPE-grown GaN layers

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