Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

摘要

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.