10kV, 87mΩcm~2 Normally-off 4H-SiC Vertical Junction Field-Effect Transistors

摘要

SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperature applications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TI-VJFET) does not require epi-regrowth and is capable of high current density. In this work we demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistors (TI-VJFET), based on 120μm, 4.9xl0~(l4)cm~(-3) and 100μm, 6x10~(l4)cm~(-3) drift layers. The corresponding devices showed blocking voltage (V_B) of 11.1 kV and specific on-resistance (R_(SP_ON)) of 124mΩcm~2, and V_B of 10kV and R_(SP_ON) of 87mΩcm~2. A record-high value for V_B~2/R_(SP_ON) of 1149MW/cm~2 was achieved for normally-off SiC FETs.