Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy

摘要

Spatial distribution of deep levels in bulk and epitaxial SiC wafers has been observed by use of the isothermal capacitance transient spectroscopy method. From the spatial distribution of a deep level, Z_1 center, located 0.6 eV below the conduction band, it was found that the introduction of Z_1 center in the epitaxial layer had mainly occurred at the initial phase of the epitaxial growth and that the introduction of Z_1 center is independent of the bulk substrate conditions but depends on the epitaxial conditions.