InN Nanostructured Materials: Controlled Synthesis, Characterizations, and Applications

摘要

InN 1D materials were successfully grown by metal-organic vapor phase epitaxy (MOVPE) and non-catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE) on Si, GaN, and c-Al_2O_3 substrates. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent vapor-solid (VS) growth mechanism by H-MOVPE. On a contrary when conventional MOVPE was employed InN nanowires were grown via vapor-liquid-solid (VLS) mechanism. The controlled growth of self-seeded Ill-Nitride nanostructured materials has been demonstrated.