Characteristics of gallium oxide nanowires synthesized by the metalorganic chemical vapor deposition

摘要

We have synthesized the high-density Ga_2O_3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga_2O_3 nanowires were crystalline.