Amorphous gallium oxide nanowires synthesized by metalorganic chemical vapor deposition

摘要

We have prepared the large-scaled gallium oxide nanowire arrays on sapphire substrates using a reaction of a trimethylgallium (TMGa) and oxygen (Ch) mixture. The cross-section of the gallium oxide nanowires had a circular shape with the diameter of about 40-110 nm. Transmission electron microscopy and X-ray diffraction analysis together showed that the nanowires were amorphous phase. Photoluminescence measurements indicated that as-prepared nanowires showed two emission band at 365 and 470 nm.