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Substrate Effect on the Diamond-Like Carbon Films Synthesized by RF Plasma Enhanced Chemical Vapor Deposition

机译:射频等离子体增强化学气相沉积合成的类金刚石膜上的基体效应

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Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition using methane as carbon source. Effect of substrate on the growth of DLC films was investigated by using four different substrate materials, silicon wafer (100), glass, flat-polished and mirror-polished alumina. The carbon films were deposited at four different self-bias voltages (-157 V, -403 V, -500 V and -590 V) by changing the plasma power under fixed flow rate and working pressure. Raman analyses indicated that DLC films were deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, and polymer-like carbon films were obtained at -157 V. For the alumina substrates, different Raman results were observed for flat-polished and mirror-polished alumina substrates. The hardness of DLC films, deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, was within 16~20 Gpa using nanoindentation technique.
机译:以甲烷为碳源,通过射频等离子体增强化学气相沉积法合成了类金刚石碳膜。通过使用四种不同的基材材料,硅晶片(100),玻璃,平面抛光和镜面抛光氧化铝,研究了基材对DLC膜生长的影响。通过在固定流速和工作压力下改变等离子体功率,以四个不同的自偏压(-157 V,-403 V,-500 V和-590 V)沉积碳膜。拉曼分析表明,DLC膜以-403 V〜-590 V的自偏压沉积在硅和玻璃基板上,并在-157 V处获得类聚合物碳膜。对于氧化铝基板,观察到不同的拉曼结果。平抛光和镜面抛光氧化铝基材。采用纳米压痕技术,DLC薄膜在自偏压为-403 V〜-590 V时沉积在硅和玻璃基板上的硬度在16〜20 Gpa之间。

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