首页> 外文会议>International Conference on Precision Engineering and Micro/Nano Technology in Asia; 20051112-14; Shenzhen(CN) >Residual Area Max Depth Model for Nanoindentation Hardness Size Effect of Single Crystal Silicon
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Residual Area Max Depth Model for Nanoindentation Hardness Size Effect of Single Crystal Silicon

机译:单晶硅纳米压痕硬度尺寸效应的剩余面积最大深度模型

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In material nanoindentation hardness testing, the hardness will decrease with the indentation depth or peak load increase, i.e. indentation size effect (ISE). There are several models and equations were proposed to describe ISE. But the variables self-inaccurate in these models and equations, it will affect the result trueness. Single crystal silicon was used for nanoindentation experiments, and max depths were obtained from these experiments. Combining Matlab software, residual areas were obtained by atomic force microscopy (AFM). Based on max depth and residual area, a new model-residual area max depth model was proposed for indentation size effect in nanoindentaion hardness. The new model perhaps can understand and describe ISE in indentation hardness better than other models and equations.
机译:在材料纳米压痕硬度测试中,硬度将随着压痕深度或峰值载荷的增加而降低,即压痕尺寸效应(ISE)。提出了多种模型和方程式来描述ISE。但是这些模型和方程中的变量自身不准确,这会影响结果的真实性。将单晶硅用于纳米压痕实验,并从这些实验中获得最大深度。结合Matlab软件,通过原子力显微镜(AFM)获得残留区域。基于最大深度和剩余面积,提出了一种新的模型-剩余面积最大深度模型,用于纳米压痕硬度的压痕尺寸效应。新模型也许可以比其他模型和方程更好地理解和描述压痕硬度的ISE。

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