MDmesh™ Power MOSFET: A new high voltage MOSFET designed to optimize the design of Power Supplies and Energy Conversion Systems

摘要

A new high voltage MOSFET structure is presented, which results in static as well as dynamic performances significantly ahead of conventional products. It is shown that the design of a new "multiple" drain structure plus the adoption of the well-consolidated Mesh Overlay™ strip-based layout, not only translates into a substantial reduction of on-losses because of three-fold cut in R_(DS(on)), but also into remarkable switching losses minimization making this product suitable for efficiently boosting the system''s power density. Advantages and benefits are therefore quantified in typical circuit applications. Finally, extension to 800V capability is shown; the latest development also incorporating a fast-recovery diode is presented. The new resulting "FD" series is therefore the state-of-the-art technology incorporating all benefits of the basic MDmesh technology plus a drastic improvement of the intrinsic body-drain diode with unequalled dV/dt ruggedness and exceptional avalanche capability.