ASPECTS OF HETEROEPITAXIAL GROWTH

摘要

The paper discusses several aspects of heteroepitaxial growth including bonding, lattice mismatch and surface free energy, via several in-situ UHV experiments. The Ni/Ru(0001) shows a novel pathway for the misfit strain relaxation by the formation of a quartet reconstruction, while the atomically rough W(111) shows a massive faceting with an adsorbed metal monolayer. In case of the Sb/Si(111) interface, the dangling bond minimization schemes result in a delayed onset of band bending and a variety of novel surface phases. The results demonstrate the dominant role the kinetics of growth plays in determining the morphological, structural and electronic properties of interfaces.