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How Can We Understand Heteroepitaxial Growth Modes With A Computer Simulation? (a Perspective On The Article, 'heteroepitaxial Growth Modes With Dislocations In A Two-dimensional Elastic Lattice Model')

机译:如何通过计算机仿真了解异质外延生长模式? (关于文章“二维弹性格子模型中具有位错的异质外延生长模式”的观点)

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摘要

In many textbooks, heteroepitaxial growth of crystals is categorized into three typical modes: layer-by-layer growth (Franck-van der Merwe growth), layer-by-layer growth followed by island formation (Stranski-Krastanow growth) and three-dimensional island growth (Volmer-Weber growth). Understanding which one of the growth modes appears for a certain substrate-adsorbate combination has been a longstanding problem from both fundamental and application viewpoints. So far a number of theoretical models and computational methods have been proposed on this problem ranging from macroscopic ones to atomistic ones, although they often contain somewhat ad hoc parameters or otherwise suffer from too much simplification to describe all of the three modes.
机译:在许多教科书中,晶体的异质外延生长可分为三种典型模式:逐层生长(Franck-van der Merwe生长),逐层生长然后形成岛(Stranski-Krastanow生长)和三维岛屿增长(Volmer-Weber增长)。从基础和应用的观点来看,了解对于特定的底物-吸附物组合出现哪种生长模式一直是一个长期存在的问题。迄今为止,已经针对该问题提出了许多理论模型和计算方法,范围从宏观模型到原子模型,尽管它们通常包含一些临时性参数,或者否则过于简化以致无法描述这三种模式。

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