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Research progress of laterally coupled DFB - LD

机译:横向耦合DFB-LD的研究进展

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摘要

The laterally coupled DFB-LD shows unique advantages to achieve single longitudinal mode LD, which has attracted the attention of researchers both at home and abroad in recent years. The laterally coupled DFB-LD can not only effectively solve wavelength stability problem of a LD, but also can realize high performance devices owing to its monolithic preparation technology. It is of great importance to the development of small, efficient and low-cost wavelength locked semiconductor lasers. In this paper, we analyzed laterally coupled DFB-LD in terms of its structural characteristics, operating mechanism, and output characteristics. As the grating position is different from that of the traditional Bragg grating, some technical methods are explored and the main research advances over the world are reviewed. Finally, its development prospects are forecasted.
机译:横向耦合的DFB-LD在实现单纵向模式LD方面显示出独特的优势,近年来引起了国内外研究者的关注。横向耦合的DFB-LD不仅可以有效地解决LD的波长稳定性问题,而且由于其整体制备技术而可以实现高性能的器件。这对于小型,高效和低成本的波长锁定半导体激光器的开发非常重要。在本文中,我们从横向耦合的DFB-LD的结构特性,运行机制和输出特性方面进行了分析。由于光栅的位置不同于传统的布拉格光栅,因此探索了一些技术方法,并综述了世界范围内的主要研究进展。最后,对其发展前景进行了展望。

著录项

  • 来源
  • 会议地点 Beijing(CN)
  • 作者单位

    National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology,Weixing Rd 7089, Changchun, 130022, China;

    National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology,Weixing Rd 7089, Changchun, 130022, China;

    National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology,Weixing Rd 7089, Changchun, 130022, China;

    National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology,Weixing Rd 7089, Changchun, 130022, China;

    National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology,Weixing Rd 7089, Changchun, 130022, China;

    National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology,Weixing Rd 7089, Changchun, 130022, China;

    National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology,Weixing Rd 7089, Changchun, 130022, China;

    National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology,Weixing Rd 7089, Changchun, 130022, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    laser diode (LD); distributed feedback (DFB); lateral coupling grating;

    机译:激光二极管(LD);分布式反馈(DFB);横向耦合光栅;
  • 入库时间 2022-08-26 14:32:46

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