Magnetostrictive Characteristics of Fe-Ga Thin Films Formed by Ion Plating Using Dual Vapor Deposition

摘要

Ion plating (IP) process was used for film preparation. Fe and Ga were evaporated by electron beam and resistance heating respectively. The film samples with Fe-8 at%Ga, Fe-17 at%Ga and Fe-24 at%Ga were obtained by IP of dual vapor source. XRD results showed that the Fe-17 at%Ga and Fe-24 at%Ga films had b.c.c. structure. It was known that solubility limit of Ga is only about 10 % in Fe at equilibrium state. It found that the Ga was transcended solid solubility limit in Fe by using IP process. The sample of Fe-17 at%Ga showed maximum value of magnetostriction is about 200 ppm at 1200 kA/m.