Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire structure under the effect of terahertz electric field

摘要

Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire transistor structure is performed. The response of electron drift velocity on the action of harmonic longitudinal electric field is calculated for several values of electric field strength amplitude and gate bias at 77 and 300 K. The periodical electric field has a 1 THz frequency. The nonlinear behaviour of electron drift velocity due to scattering processes is observed.