Total Ionizing Dose Effects on the IGBT Performance for a DC-DC Converter

摘要

IGBT in power system has been dominating MOS (Metal Oxide Semiconductor) transistor since IGBTs (Insulated Gate Bipolar Transistor) guarantee better conduction loss and large current capacity. The radiation induced characteristics of IGBT are mainly emphasized the threshold shifting due to the oxide charge trapping in MOS and the reduction of current gain in the bipolar transistor being inherently composed in the IGBT structure. A lot of analysis on IGBT irradiation has been carried out by researchers. The IGBT in the converter plays an important role in switching. In this paper, the IGBT macro-model for the DC/DC converter is implemented and analyzed the electrical characteristics by SPICE simulation model. In addition, the design SPICE parameters of BF (forward beta), KP (MOS trans-conductance), and V_T (threshold voltage) by y radiation effects are evaluated