The effect of technological condition on electrical properties of ITO films

摘要

The transparent ITO multi-layers films were fabricated on quartz glass substrate by colloid dip-coating technique from indium metal ingots and stannic chloride. It was systematically studied that the effect of the electrical properties of the ITO on doped Sn in quantitative change, different dip-coating technological conditions such as thermal treatment process, coating number plies by four-probe instrument. From the 5 wt. % Sn to 20 wt. % Sn, with the amount of doped Sn increasing, the sheet resistance of ITO was up to minimum and then increased. Sintering temperature and holding time were the reasons for the electrical properties of the ITO films, when other parameters are unaltered. It is also concluded that coating number plies was play an important role on electrical properties of ITO films by sheet resistance. From the results of research, it can be seen that the multi-layer films has optimum characteristics, whose sheet resistance is 117Ω/□, when the use level of Sn is 10%wt,heated in 800℃ 15min with repeated dip-coating seven times..