LOCAL STRAIN MEASUREMENT IN Si WITH 100 nm SPATIAL RESOLUTION

摘要

We present here a novel x-ray diffraction method which allows the determination of structural parameters with very high spatial resolution in one dimension (100 nm). The method is based on an X-ray microscope whose main element is a waveguide for medium and high energy X-rays (8-30 KeV). The properties of the x-ray beam delivered by the waveguide allows a projection geometry where structural sample details are magnified hundred or thousand times on a 2D detector. We proved the capability of this approach on sub-micrometer LOCOS (Local Oxidation of Silicon) structures where we measured local strain of silicon substrate under the oxide stripes with 10~(-4) strain sensitivity and 100 nm spatial resolution.