TiAl_3: A CONTRIBUTORY FACTOR IN DELAYING ELECTROMIGRATION FAILURE

摘要

In submicron ULSI devices the demands placed on the reliability of a process have become staggering and the successful development of new technologies must include the identification and characterisation of all basics wear-out failure mechanisms to ensure the overall process reliability. Electromigration (EM) lifetime tests and post-mortem TEM analyses on TiN/AlCu/Ti/TiN/Ti (from top to bottom) stacked structure have been carried out on two-levels W-plug terminated structures. Electrical and morphological results explain why EM effects in the presence of refractory metal layers typically consist in a limited resistance increase, which gradually leads to failure, retarding the onset of irretrievable damage in the conductor.