首页> 外文会议>International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices", Pt.B, May 28-Jun 2, 2000, Venice, Italy >THE INFLUENCE OF Si_3N_4 COMPOSITION AND MECHANICAL /CHEMICAL PRE-TREATMENTS ON THE ADHESION STRENGTH OF MPCVD DIAMOND FILMS
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THE INFLUENCE OF Si_3N_4 COMPOSITION AND MECHANICAL /CHEMICAL PRE-TREATMENTS ON THE ADHESION STRENGTH OF MPCVD DIAMOND FILMS

机译:Si_3N_4的组成及机械/化学预处理对MPCVD金刚石膜附着强度的影响

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摘要

The influence of Si_3N_4 composition and surface state on CVD diamond nucleation density and adhesion strength is studied. Acid leaching, CF_4 plasma etching, scratching with diamond powder and ultrasonic diamond suspension agitation were the selected surface treatments prior to CVD diamond deposition. The effect of SiC inclusions in the Si_3N_4 matrix is further investigated, as the carbide enhances the substrate/film chemical bonding and promotes adhesion. Nucleation density was evaluated by SEM analysis. The film/substrate adhesion and stress state were measured by the Brale indentation method.
机译:研究了Si_3N_4的组成和表面状态对CVD金刚石成核密度和附着强度的影响。在CVD金刚石沉积之前,酸浸,CF_4等离子蚀刻,用金刚石粉末刮擦和超声金刚石悬浮液搅拌是选择的表面处理。进一步研究了SiC夹杂物在Si_3N_4基体中的作用,因为碳化物增强了基材/薄膜的化学键合并增强了附着力。通过SEM分析评价成核密度。膜/基材的粘附力和应力状态通过Brale压痕法测量。

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