Laser-based processes of ion implantation for Pt~+/SiC gas sensor formation

摘要

A relatively simple technique of high-energy ion implantation of the pulsed laser plasma under the influence of an external pulsed electric field is suggested. The developed mathematical model allows forecasting depth distribution of implanted atoms on the basis of experimental measurements of fundamental physical characteristics of the pulsed laser plasma and the technical parameters of high-voltage system. The possibility of implantation of platinum ions from laser plasma to create on-chip n-SiC hydrogen sensor for use in complicated conditions is demonstrated.