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Local moment systems: magnetism and electronic correlations

机译:局部力矩系统:磁性和电子相关

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We describe local-moment systems by the (multiband) s-f model (ferromagnetic Kondo-lattice model) which traces back the characteristic properties of such materials to an interband exchange coupling between itinerant conduction electrons and localized magnetic moments. We first present a many-body approach to the electronic and magnetic properties of the single-band model. The exchange coupling leads, on the one hand, to a distinct temperature-dependence of the electronic quasiparticle spectrum and, on the other hand, to magnetic properties, as e. g. the Curie temperature TC or the magnon dispersion, which are strongly influenced by the band electron selfenergy and therewith in particular by the carrier density. Results for the electronic part are given in terms of quasiparticle densities of states and quasiparticle band structures and for the magnetic part in terms of the selfconsistently derived Curie temperature and spin wave spectra. The transition from weak-coupling (RKKY) to strong-coupling (double exchange) behaviour is worked out. The multiband model is combined with an ab-initio bandstructure calculation to describe real magnetic materials. The proposed method avoids the double counting of relevant interactions and takes into account the correct symmetry of atomic orbitals. For the ferromagnetic metal Gd we get a selfconsistently derived Curie temperature of 301.5 K and a T = 0-moment of 7.81μ _B, very close to the experimental values. Furthermore a striking induced temperature-dependence of the 5d conduction bands explains respective photoemission data. For the ferromagnetic semiconductors EuO and EuS we present results for electronic and magnetic bulk properties as well as for thin films.
机译:我们通过(多频带)s-f模型(铁磁近藤-格模型)描述局部矩系统,该模型追溯了此类材料的特性,使其在巡回传导电子和局部磁矩之间形成带间交换耦合。我们首先提出一种单体模型的电子和磁性特性的多体方法。交换耦合一方面导致电子准粒子光谱的明显的温度依赖性,另一方面导致磁特性,例如e。 G。居里温度TC或磁振子色散,强烈地受到带电子自能,特别是载流子密度的影响。电子部分的结果以状态的准粒子密度和准粒子能带结构给出,磁性部分的结果以自洽导出的居里温度和自旋波谱给出。研究了从弱耦合(RKKY)到强耦合(双交换)行为的过渡。多频带模型与从头开始的能带结构计算相结合,以描述真实的磁性材料。所提出的方法避免了对相关相互作用的重复计算,并考虑了原子轨道的正确对称性。对于铁磁性金属Gd,我们得到的自居里居里温度为301.5 K,T = 0矩为7.81μ_B,非常接近实验值。此外,引人注目的5d导带的温度依赖性解释了各自的光发射数据。对于铁磁半导体EuO和EuS,我们给出了电子和磁性体性质以及薄膜的结果。

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