ON THE CURRENT DOMAIN PICTURE OF THE MICROWAVE INDUCED ZERO-RESISTANCE OF HIGH MOBILITY QUANTUM HALL SYSTEMS

摘要

Numerical simulations of the current domain picture, which is frequently used to describe the microwave induced zero resistance state of high mobility 2-dimensional electron systems, are shown. We demonstrate, that we obtain a situation, which is equivalent to the current domain picture by introducing an artificial domain wall into our network model for magneto transport. However, in contrast to the current domain picture the current in our simulations is insensitive to the width of the domains. Finally we propose an alternative picture where we use several domain walls, which are distributed along the current path. These serve as current filaments and lead also to a vanishing longitudinal resistance, while the Hall resistance remains unchanged.