首页> 外文会议>International Conference on High Magnetic Fields in Semiconductor Physics; 20040802-06; Tallahassee,FL(US) >TUNNELING BETWEEN BILAYER QUANTUM HALL STRUCTURES IN A STRONG MAGNETIC FIELD
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TUNNELING BETWEEN BILAYER QUANTUM HALL STRUCTURES IN A STRONG MAGNETIC FIELD

机译:强磁场中双量子层霍尔结构之间的隧道效应

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摘要

We calculate the tunneling current in a quantum Hall bilayer system in the strong magnetic field limit. We model the bilayer electron system as two Wigner crystals coupled through interlayer Coulomb interactions, treated in the continuum limit. We generalized the Johansson and Kinaret (JK) model and were able to study the effect of the low energy out-of-phase magnetophonon modes produced as a result of tunneling events. We find the same scaling behavior of the tunneling current peak with the magnetic field as found by JK but were able to find the tunneling current scaling behavior with interlayer distance as well.
机译:我们在强磁场极限下计算量子霍尔双层系统中的隧穿电流。我们将双层电子系统建模为两个Wigner晶体,它们通过层间库仑相互作用耦合,并在连续限度内处理。我们推广了Johansson和Kinaret(JK)模型,并能够研究由于隧穿事件而产生的低能异相磁浮子模式的影响。我们发现隧道电流峰值随磁场的缩放行为与JK相同,但也能够找到层间距离对隧道电流缩放行为的影响。

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