GIAXD and XPS study of 3C-SiC film prepared by EB-PVD

摘要

3C-SiC film is deposited on stainless steel (SS) substrate at 800℃ by electron beam-physical vapor deposition (EB-PVD).The crystallization and composition of SiC film are studied by grazing incidence X-ray asymmetry diffraction (GIAXD).Surface chemical analysis of SiC film is carried out by X-ray photoelectron spectroscopy (XPS).The results of GIAXD and XPS analysis show that the film is not perfect and C-rich.