Structural changes of silicon crystals after high energy electron irradiation

摘要

The secondary processes in monocrystalline Si before and after high-energy electron irradiation (about 18 MeV) and combined electron and gamma irradiation have been studied using the X-ray diffraction analysis and the method of internal friction in the infra-sound frequency range. It was shown that the irradiation influences on the degree of structural perfection of crystals and significantly deforms the infra-sound absorption spectrum and leads to an amplitude dependencies of the effective shear modulus (G_(ef)) and to it's temperature hysteresis Presumptions about the nature of the observed phenomena were advanced.