Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

摘要

Structural changes in silicon single crystals irradiated with high-energyudelectrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curveudbehaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocaludspace maps (HR-RSMs) were found as a function of the radiation dose. The generalizeduddynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several typesud(spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurfaceudlayer was used for explanation.