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Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

机译:高分辨率X射线衍射数据分析高能电子辐照Cz-Si单晶的结构变化。

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摘要

Structural changes in silicon single crystals irradiated with high-energyudelectrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curveudbehaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocaludspace maps (HR-RSMs) were found as a function of the radiation dose. The generalizeduddynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several typesud(spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurfaceudlayer was used for explanation.
机译:研究了用高能/超电子(Å= 18 MeV)辐照的硅单晶的结构变化。在高分辨率倒数 udspace图(HR-RSMs)中,发现了衍射反射曲线行为和异扩散线轮廓的变化与辐射剂量的关系。晶体的X射线布拉格衍射的广义动力学理论用于解释几种缺陷类型(球形和盘状簇以及位错环)和损坏的近表面双层。

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