The Design of CMOS RF Low Noise Amplifiers

摘要

A design approach of CMOS radio frequency (RF) low noise amplifiers (LNAs) is presented in this paper. With short-channel MOSFET model, analytical model of the source degenerated amplifiers is derived and verified by simulation at 2.4GHz with 0.18 μm technology. It is shown that low noise and low power may probably be achieved simultaneously. With the help of these models, the designer can not only get the LNA performance quickly, but also gain the optimal designs or quickly and intuitively dig out the problem of the circuitry.