Modeling of the Electrical Derivative Characteristic of InGaAsP Multiple-Quantum-Well Lasers

摘要

A comprehemsive semiconductor laser model is used to anlayze the first electrical derivative characteristics of ling wavelength MQW semiconductor lasers. It is found that the charge neutrality condition and the continuity of the quasi-Fermi levels, usually assumed in the rate equation appraoch, need not be respected. The rist electrical derivative characteristics of abrupt and GRINSCH MQW structures are preented. The effects of doping in the active region on the optical gain and on the first electrical derivative characteristic are also studied.