A New Method to Evaluate the Degree of Potential Fluctuation in InGaN Quantum-Well Laser Diodes by Optical-Pump Stimulated-Emission Measurements

摘要

It is well-known that potential fluctuation in InGaN quantum-well layers is very large. To investigate its effect on the laser characteristics, we have found a new method to evaluate the degree of fluctuation from the temperature dependence of the lasing threshold excitation power density.