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Study on XRD、Optical and Electrical performance of Transparent Conducting ZnO:Al(ZAO) Thin Films

机译:透明导电ZnO:Al(ZAO)薄膜的XRD,光电性能研究

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The ZAO (ZnO: Al) thin films were prepared by DC reactive magnetron sputtering technique. The XRD, electrical and optical properties of films are particular investigated-The results show that ZAO films are polycrystalline hexagonal wurtzite structure, and we are not rind A12O3 crystal phase. At the same time, we gained the high quality ZAO films with the minimum resistivuty of 4.5×10-4 Ω ? cm, the transmittance in visible region above 80% and the reflectivity in IR region above 70%.
机译:通过直流反应磁控溅射技术制备了ZAO(ZnO:Al)薄膜。对薄膜的XRD,电学和光学性能进行了详细研究。结果表明,ZAO薄膜为多晶六方纤锌矿结构,我们没有浸入Al 2 O 3晶相。同时,我们获得了高质量的ZAO膜,其最小电阻率为4.5×10-4Ω?。厘米,可见光区域的透射率在80%以上,红外区域的反射率在70%以上。

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  • 会议地点 Wuhan(CN);Wuhan(CN)
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    School of Transportation and Mechanical Engineering Shenyang Jianzhu Uinversity Shenyang l 10168 China;

    School of Mechanical Engineering Automation Northeastern University.Shenyang 110004 China;

    Institute of Metal Research The Chinese Academy of Sciences Shenyang 110015 China.;

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