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A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage

机译：基于层状HSO和HZO铁电层的多层FeFET存储器件用于高密度存储

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摘要

We report 1-3 bit/cell FeFET operation through optimized HSO and HZO ferroelectric laminate layers using alumina interlayers. Memory window up to 3.5V, switching speed of 300ns, 10 years retention, and 10

机译：我们通过使用氧化铝夹层的优化的HSO和HZO铁电层压层报告了1-3位/单元的FeFET操作。内存窗口高达3.5V，切换速度为300ns，保留10年，并且10

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来源
《International Electron Devices Meeting》|2019年|1-4|共4页
会议地点 San Francisco(US)
作者
T. Ali; P. Polakowski; K. Kühnel; M. Czernohorsky; T. Kämpfe; M. Rudolph; B. Pätzold; D. Lehninger; F. Müller; R. Olivo; M. Lederer; R. Hoffmann; P. Steinke; K. Zimmermann; U. Mühle; K. Seidel; J. Müller;
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作者单位

Fraunhofer IPMS-CNT Dresden Germany;

Ferroelectric Memory GmbH Dresden Germany;

Fraunhofer IPMS-CNT Dresden Germa;

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alumina; ferroelectric storage; ferroelectric switching; field effect memory circuits; laminates;

机译：氧化铝铁电存储器铁电开关场效应存储电路；层压板;

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专利

1. Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics [J] . Ali T., Polakowski P., Riedel S., Applied Physics Letters . 2018,第22期

机译：硅掺杂的氧化ha（HSO）和氧化z锆（HZO）的FeFET：与器件物理的材料关系
2. Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory [J] . Ali Tarek, Mertens Konstantin, Olivo Ricardo, IEEE Transactions on Electron Devices . 2021,第4期

机译：电荷捕集层的非线性介电滞后性能在新型混合高速和低功率铁电或防冻电荷HSO / HZO升压电荷陷阱记忆中的影响
3. Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories [J] . Jimenez David, Miranda Enrique, Tsurumaki-Fukuchi Atsushi, Applied Physics Letters . 2013,第26期

机译：基于铁电电阻开关的Bi缺陷Pt / BFO / SRO异质结构中的多级记录，目标是将非易失性存储器中的高密度信息存储
4. A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage [C] . T. Ali, P. Polakowski, K. Kühnel, International Electron Devices Meeting . 2019

机译：基于层压HSO和HZO铁电层的多级FEFET存储器件，用于高密度存储
5. Tunable Photonic Devices in Ferroelectric-Based Layered Structures. [D] . Xin, Jianzhuo. 2012

机译：基于铁电的分层结构中的可调光子器件。
6. Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements [O] . Wenwu Xiao, Chen Liu, Yue Peng, 2019

机译：具有快速电压脉冲测量特性的ZrO2种子层的基于Hf0.5Zr0.5O2的FeFET的存储窗口和耐久性的提高
7. Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories [O] . Jiménez, David, Miranda, Enrique, Tsurumaki-Fukuchi, Atsushi, 2014

机译：基于Bi缺陷的pt / BFO / sRO异质结构的多级记录针对高密度信息的铁电电阻切换存储在非易失性存储器中

A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage

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