Level repulsion in nano-photoluminescence spectra fromsingle GaAs quantum wells

机译：来自单个GaAs量子阱的纳米光致发光光谱中的能级排斥

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A detailed analysis of nano-photoluminescence spectra along the lines ofautocorrelation spectroscopy using lter functions allows for a clear distinction between stateslocalized in monolayer islands and more extended states which show level repulsion.

机译：使用lter函数沿着自相关光谱线对纳米光致发光光谱进行详细分析，可以清楚地区分位于单层岛中的状态和显示水平斥力的更多扩展状态。

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来源
《International conference on the physics of semiconductors;ICPS》|2002年|1-2|共2页
会议地点 Edinburgh(GB);Edinburgh(GB)
作者
G. von Freymann; U. Neuberth; M. Deubel; M. Wegener; G. Khitrova; H. M. Gibbs;
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Institut für Angewandte Physik Universit?t Karlsruhe (TH) 76128 Karlsruhe Germany;

Optical Sciences Center University of Arizona Tucson AZ 85721 U.S.A;

Optical Sciences Center University of Arizona Tucson AZ 85721 U.S.A.;

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1. Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells - art. no. 205327 [J] . von Freymann G., Neuberth U., Deubel M., Physical Review, B. Condensed Matter . 2002,第20期

机译：来自单个GaAs量子阱的纳米光致发光光谱中的能级排斥-艺术。没有。 205327
2. Exciton relaxation and level repulsion in GaAs/Al_xGa_(1-x)As quantum wires [J] . A. Feltrin, R. Idrissi Kaitouni, A. Crottini, Physical Review. B, Condensed Matter . 2004,第20期

机译：GaAs / Al_xGa_（1-x）As量子线中的激子弛豫和能级排斥
3. Photoluminescence spectra and level repulsion in quantum wires [J] . A. Feltrin, A. Crottini, M. A. Dupertuis, Physica Status Solidi. C, Conferences and critical reviews . 2004,第3期

机译：量子线中的光致发光光谱和能级排斥
4. Evaluation of the degeneracy of hole's quantum levels in the InGaAS/InP quantum well structures by using photoluminescence spectra [C] . Esaki M., Saito Y., Imai H. Indium Phosphide amp; Related Materials, 2009. IPRM '09 . 2009

机译：利用光致发光光谱评估InGaAS / InP量子阱结构中空穴量子能级的简并性
5. Power and spectral characterization of InGaAsP-InP multi-quantum well lasers [D] . Prosyk, Kelvin. 1998

机译：InGaASP-INP多量子孔激光器的功率和光谱表征
6. Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells [O] . Jinling Yu, Shuying Cheng, Yunfeng Lai, 2014

机译：InGaAs / GaAs / AlGaAs阶跃量子阱中带间激发的Rashba型和Dresselhaus型圆形光电流效应引起的自旋光电流谱
7. Quantum Mechanical Repulsion of Exciton Levels in a Disordered Quantum Well [O] . Elsaesser, Thomas, Emiliani, Valentina, Intonti, Francesca, 2001

机译：无序量子阱中激子能级的量子机械排斥
8. Temporal and spectral investigation of multi-Landau level quantum beats in GaAs [R] . Siegner, U. , Mycek, M. A. , Chemla, D. S. 1994

机译：Gaas中多Landau能量子拍的时间和光谱研究

Level repulsion in nano-photoluminescence spectra fromsingle GaAs quantum wells

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