Extraordinary magnetoresistance in macroscopic andmesoscopic non-magnetic narrow-gapsemiconductor/metal composite structures

摘要

The room temperature extraordinary magnetoresistance (EMR)of externally shunted macroscopic Te-doped InSb and mesoscopic SidopedInSb/Al0.15In0.85Sb quantum well structures has been studied as afunction of the shunt dimensions. In all cases the shunting material wasAu. For the mesoscopic structures used in this study, leakage current fromthe conducting leads to the lower barrier of the quantum well has beenminimized by the introduction of an Al2O3 insulating layer. We find thateffective shunting enhances the performance of both macroscopic andmesoscopic EMR devices.