Photoluminescence Study of the 1052-meV ‘O-line’optical transitions in heat-treated Czochralski Si

摘要

The photoluminescence (PL) transitions observed near 1052meV in heat-treated, oxygen-rich silicon have been studied extensively,and various conflicting models have been proposed. Recent investigationsexplained the origin of these transitions as being due to an isoelectroniccenter that can bind up to four electron-hole pairs [1], thus accounting tbrthe multiplicity of the lines. However, it has been questioned whether thiscenter binds up to four electron-hole pairs or rather only one or two [2].We have reexamined these transitions using temperature- and excitation-density dependent PL measurements, over a much wider range ofexcitation-densities than was previously possible.