Si/SiGe Quantum Cascade Emitters for TerahertzApplications

机译：用于太赫兹应用的Si / SiGe量子级联发射极

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Intersubband electroluminescence measurements are presented for anumber of strain-symmetrised Si/SiGe quantum cascade emitters operating in theTHz region of the electromagnetic spectrum. Detailed electrical and physicalcharacterisation is presented along with non-radiative lifetime measurements usinga free electron laser. Maximum output power is 10 nW at 40 K for emission at 2.9THz (103 μm wavelength).

机译：针对在电磁频谱的THz范围内工作的许多应变对称Si / SiGe量子级联发射器提供了子带间电致发光测量。介绍了详细的电气和物理特性，以及使用自由电子激光器的非辐射寿命测量。在2.9THz（103μm波长）下发射时，在40 K下的最大输出功率为10 nW。

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来源
《International conference on the physics of semiconductors;ICPS》|2002年|1-8|共8页
会议地点 Edinburgh(GB);Edinburgh(GB)
作者
D J Paul; S A Lynch; R Bates; Z Ikoni′c; R W Kelsall; P Harrison; C R Pidgeon; P Murzyn; J P R Wells; D JNorris; S L Liew; A G Cullis; W Tribe; D D Arnone;
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Cavendish Laboratory University of Cambridge Madingley Road Cambridge CB3 0HE U.K.;

University of Leeds Institute for Microwaves and Photonics School of Electronicand Electrical Engineering Leeds LS2 9JT U.K.;

Heriot-Watt University Department of Physics Riccarton Edinburgh EH14 4AS U.K.;

Heriot-Watt University Department of Physics Ricca;

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1. Optical cavities for Si/SiGe tetrahertz quantum cascade emitters [J] . R.W. Kelsall, Z. Ikonic, P. Harrison, Optical Materials . 2005,第5期

机译：Si / SiGe四赫兹量子级联发射器的光腔
2. Electroluminescence from Si/SiGe quantum cascade emitters [J] . Paul DJ., Lynch SA., Bates R., Physica, E. Low-dimensional systems & nanostructures . 2003,第3a4期

机译：Si / SiGe量子级联发射器的电致发光
3. Si/SiGe quantum-cascade emitters for terahertz applications [J] . Paul DJ., Lynch SA., Bates R., Physica, E. Low-dimensional systems & nanostructures . 2003,第1期

机译：用于太赫兹应用的Si / SiGe量子级联发射器
4. STRAIN COMPENSATED SI/SIGE QUANTUM CASCADE EMITTERS GROWN ON SIGE PSEUDOSUBSTRATES [C] . L. DIEHL, S. MENTESE, H. SIGG, NATO advanced research workshop on towards the First silicon laser . 2003

机译：在SiGe伪软管上生长的应变补偿Si / SiGe量子级联发射器
5. Novel layered semiconductor quantum structures in new material systems --- III-nitride quantum cascade emitters and detectors, light emission in Fe:ZnSe with quantum cascade laser pumping, theoretical methods with real-time Green's functions, and hyperbolic metamaterials. [D] . Song, Yu. 2014

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6. Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers [O] . Marcin Motyka, Grzegorz Sęk, Krzysztof Ryczko, 2015

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7. Si/SiGe bound-to-continuum quantum cascade emitters [O] . Paul D.J., Matmon G., Lever L., 2008

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Si/SiGe Quantum Cascade Emitters for TerahertzApplications

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